Using APL format

Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure A. Georgakilas, G. Deligeorgis, E. Aperathitis, D. Cengher

Optoelectronic Devices: Low‐Temperature

As reported by Yizheng Jin, Baoquan Sun, Feng Gao, and co‐workers in article number 1301460, these are promising candidates for hole‐transporting and

Low-temperature, solution-processed organic transistors for flexible

Organic semiconductors are inherently low-temperature materials. Due to the absence of covalent bonding between molecules they can be processed at temperatures below typically 100-150°C from

Low-temperature solution-processed amorphous-Ga

In this work, the amorphous gallium oxide (a-Ga2O3) optoelectronic synaptic devices were prepared by using a cost-effective sol–gel technique at a relatively low temperature of 400 °C.

Madagascar

Most donors and NGOs in Madagascar are involved in larger rural electrification projects or mini-grids. Be-low are few programs identified with focus to accel-erate the market for solar home systems:

Wafer fusion: A novel technique for optoelectronic device fabrication

Diodes formed by fusing p ‐ and n ‐type wafers showed normal current‐voltage characteristics and light emission. Fusion between lattice‐mismatched wafers (i.e., InP and GaAs)

Organic and hybrid organic-inorganic flexible optoelectronics: Recent

Extensive research in flexible optoelectronics, based on organic and organic-inorganic materials, has proven a leading topic because of their superior advantages in solution process

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